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Active Device Technologies. Semiconductor Diodes. Varactors. Schottky Diode Frequency Multipliers. Transit Time Microwave Devices. Bipolar Junction Transistors (BJTs). Heterostructure Bipolar Transistors (HBTs). Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Metal Semiconductor Field Effect Ransistors (MESFETs). High Electron Mobility Transistors (HEMTs). RF Power Transistors from Wide Bandgap Materials. Tubes Jerry C. Monolithic Microwave IC Technology

domingo, 21 de marzo de 2010

Bipolar junction transistor

A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices

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